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HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
SOT-32
简单说,就是不同功率的功率开关管,主要用于电子镇流器